光敏三极管响应速度与器件结构参数的关系  

Dependence of Response Speed on Structure Parameters of Phototransistors

作　　者：陈炳若[1] 余波 朱小兵 

机构地区：[1]武汉大学物理系,武汉430072

出　　处：《半导体光电》2000年第1期59-61,65,共4页Semiconductor Optoelectronics

摘　　要：对影响光敏三极管光电响应速度的器件结构进行了理论和计算机数值分析。结果表明 ,与基极电阻和电流增益相关的基区宽度是器件优化设计的重点之一。实验结果与分析结果较好一致。选用合适的基区宽度并采取其他措施 ,可使光敏三极管的响应时间降至 0 .6 μs以下。The dependece of the response speed on structure parameters of Si phototransistors is discussed based on theoretical analysis and numerical method by a computer.The results show that the base width correlated with base resistance and current gain is one of the key factors for the optimum design of the device.The measured results are in good agreement with the theoretical one.By choosing appropriate base width and other structure parameters,the response time of Si phototransistors can be in the order of shorter than 0.6 μs.

关 键 词：光敏三极管 光电响应速度 结构参数 

分 类 号：TN364[电子电信—物理电子学]