窄线宽可调谐外腔半导体激光器的研究  

External Cavity Semiconductor Laser With Narrow-Linewidth and Wavelength Tunable

作　　者：金杰[1] 郭曙光[2] 吕福云[2] 张光寅[2] 

机构地区：[1]河北工业大学电气信息学院,天津300130 [2]南开大学物理科学学院,天津300071

出　　处：《河北工业大学学报》2000年第1期87-90,共4页Journal of Hebei University of Technology

基　　金：国家攀登计划预言项目基金;天津市自然科学基金!993600711

摘　　要：报道了窄线宽、可调谐外腔半导体激光器的一些研究成果．利用闪耀光栅作反馈元件，对市售的半导体激光器形成弱耦合外腔，改善了半导体激光器的性能，实现了光谱特性较好的窄线宽单模激光输出，其边模抑制比大于３０ｄＢ，线宽小于０．０６ｎｍ．最大输出功率为３５．４ｍＷ，总的光一光转换效率为４６％．通过调整光栅转角，得到１１．６６ｎｍ的波长调谐范围．Some results of external cavity semiconductor laser with tunable narrow-line are reported in this paper Using a blazed grating to feedback and consisting weak coupled external cavity for a commercial semiconductor laser improved the output characteristics of 808urn semiconductor laser. For the external cavity semiconductor laser with single-longitudinal-mode and narrow-linewidth, we obtained an output power of 35.4 mW and a total optical-to-optical efficiency of 46%. Its side mode suppression ratio is more than 30 dB, and spectrum line width is narrower than 0.06 urn. Through turning the blazed grating. the tuning range of wavelength of l 2.38urn has been achieved.

关 键 词：半导体激光器 可调谐 窄线宽 

分 类 号：TN248.4[电子电信—物理电子学]