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作 者:周洋[1] 武光明[1] 高德文[1] 邢光建[1] 朱艳英[1] 张志乾[1] 曹阳[1]
机构地区:[1]北京石油化工学院,北京102617
出 处:《纳米科技》2012年第2期44-49,共6页
基 金:北京市教育委员会科技发展计划资助项目(KM20111007004)
摘 要:采用自制的喷雾热分解装置在玻璃衬底上制备ITO薄膜,并对实验条件进行了正交设计,以考察制备ITO薄膜的优良条件,结果表明,影响ITO薄膜光电性能的主要因素是基板温度。制备ITO薄膜的优化条件为:基板温度300℃,载气气流速度1L·min^-1,退火温度540℃,溶液配比为铟锡比10:1,喷嘴与基板距离8cm,薄膜沉积时间3.5min,相应的透光率为97%,方块电阻3875Ω/。Indium tin oxide (ITO) films were deposited on glass substrates by using the homemade spray pyrolysis system. Orthogonal test was designed to examine the optimal conditions for the preparated ITO films. The substrate temperature is the main factor on the photoelectric properties of the ITO films. The optimal conditions for preparing the ITO thin films were as following: the substrate temperature is 300℃, the carrier gas flow of the air was 1L·min-1, the annealing temper- ature was 540℃, the proportion of the indium and tin was 10:1, the distance between substrate and; nozzle was 8cm, and the deposition time was 3.5min. The average optical transmittance in the visible range and sheet resistance of the ITO film were 97% and 3875Ω/n, respectively.
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