温度对氧化锌磷掺杂机制的影响  

Influences of Temperature on the Doping Mechanism of P-doped ZnO

作　　者：梁志宏[1] 张炽棋[1] 林振国[1] 吴萍[1] 

机构地区：[1]汕头大学物理系,广东汕头515063

出　　处：《纳米科技》2012年第2期50-54,共5页

基　　金：广东省自然科学基金项目（No.10151503101000009）

摘　　要：以锌粉为原料，五氧化二磷为掺杂源，采用化学气相沉积法制备出磷掺杂的多角锥状纳米ZnO：P，分别用扫描电子显微镜（SEM）、X射线衍射议（XRD）和拉曼光谱手段研究了不同制备温度下磷掺杂对于ZnO晶体生长、拉曼模式的影响，以及磷元素有效掺杂的机理，结果表明，掺入P改变了ZnO的择优生长，随着制备温度的升高，多角锥结构逐渐细化，磷元素更容易掺入ZnO，晶格畸变加剧，晶格缺陷增多；ZnO：P对温度具有选择性，高温下P取代Zn，温度升高有利于实现znO的p型掺杂。Multiped phosphorus-doped ZnO nanostructure was synthesized by chemical vapour deposition method. The morphology, crystal structure and vibration modes of the product were investigated by scanning electron microscope （SEM）, X-Ray Diffraction （XRD） and Raman spectrum, respectively. The influences of Phosphorus on the crystal growth of ZnO and vibration modes were discussed. The doping mechanism of P-doped ZnO was also researched. The results show that doping of P leads to the change of the preferred growth of ZnO, muhiped nanostructure taper off, lattice distor- tion aggravate and lattice defects increase with the increase of temperature. P shows amphoteric in P-doped ZnO and P replaces Zn at high temperature. Rising temperature can help to achieve p-type ZnO.

关 键 词：纳米氧化锌 磷掺杂 拉曼光谱 

分 类 号：TB34[一般工业技术—材料科学与工程]