低偏振灵敏度半导体光放大器  

Semiconductor Optical Amplifier with Low Polarization Sensitivity

作　　者：段子刚[1] 张哲民[1] 刘德明[1] 黄德修[1] 金锦炎 杨新民 王彩玲 

机构地区：[1]华中理工大学光电子工程系,武汉430074 [2]武汉电信器件公司,武汉430074

出　　处：《中国激光》2000年第3期203-205,共3页Chinese Journal of Lasers

摘　　要：报道了基于混合应变量子阱材料的半导体光放大器 (SOA)。利用张应变量子阱加强了TM模的增益 ,使之接近TE模的增益 ,从而使SOA的偏振灵敏度大为降低。在 150mA的偏置下 ,获得了 2 4dB的小信号增益和 1dB的偏振灵敏度。This paper reports 1.31 μm waveband semiconductor optical amplifier (SOA) based on tensile strained quantum wells and compress strained quantum wells. For TM mode the gain is enhanced by tensile strained quantum wells, the SOA performs with low polarization sensitivity. Under the condition of 150 mA bias current, the SOA shows 24 dB small signal gain and 1 dB polarization sensitivity.

关 键 词：半导体光放大器 偏振灵敏度 应变量子阱 

分 类 号：TN722[电子电信—电路与系统]