CaS∶Eu,Sm薄膜的红外上转换发光效率  

Infrared Upconversion Efficiency of Electron-trapping Thin Film CaS∶Eu, Sm

作　　者：范文慧[1] 赵卫[2] 高雄健 邹炜 刘英[2] 王永昌[1] 侯洵[2] 

机构地区：[1]西安交通大学理学院现代物理研究所,西安710049 [2]中国科学院西安光机所瞬态光学技术国家重点实验室,西安710068

出　　处：《中国激光》2000年第3期257-263,共7页Chinese Journal of Lasers

基　　金：国家攀登计划;瞬态光学技术国家重点实验室开放基金;西安交通大学科研基金

摘　　要：采用电子束蒸发和磁控溅射技术制备了具有红外上转换和光存储特性的电子俘获材料CaS∶Eu ,Sm薄膜 ,利用不同脉宽的超短红外激光测试了它们的红外上转换效率 ,指出CaS∶Eu ,Sm薄膜的红外上转换发光效率不仅与制备工艺及热退火工艺密切相关 ,而且存在“耗尽”现象。薄膜透过率及空间分辨率测试表明 ,尽管膜厚及热退火处理对薄膜的透过率及空间分辨率有影响 ,但它们可显著增加CaS∶Eu ,Sm薄膜的红外上转换发光效率。Infrared upconversion and optical storage thin film CaS∶Eu, Sm has been successfully developed by electron beam evaporation and radio frequency (rf) magnetron sputtering. Infrared upconversion efficiency of CaS∶Eu, Sm thin films with different thickness has been investigated by using the ultrashort infrared laser pulses with different FWHM. It is shown that upconversion efficiency of CaS∶Eu, Sm thin film not only depends on the growth conditions and the post annealing process, but also has the “exhaustion” phenomenon. By means of measuring transmittance and spatial resolution of CaS∶Eu, Sm thin film, the post annealing process was found to promote grain growth which could obviously improve upconversion efficiency of CaS∶Eu, Sm thin film, even though it had negative influence on transmittance and spatial resolution of CaS∶Eu, Sm thin film.

关 键 词：电子俘获薄膜 红外上转换 发光效率 

分 类 号：TN304.055[电子电信—物理电子学]