提高LED外量子效率的研究进展  

The Research Progress on the Improvement of LED External Quantum Efficiency

作　　者：杨冲[1] 李冠群 刘大伟 李钊英 王忆[2,1] 

机构地区：[1]五邑大学应用物理与材料学院,广东江门529020 [2]木林森股份有限公司,广东中山528415

出　　处：《现代显示》2012年第5期31-35,共5页Advanced Display

摘　　要：近年来半导体照明光源-发光二极管(LED)产业和技术发展迅速,取代传统白炽灯的步伐越来越快,相关核心技术的研究也成为各国研究的热点,但LED的发光效率和制造成本依然是阻碍LED绿色照明光源普遍推广应用的一个绊脚石。文章简述了提高外量子效率的几种有效途径,如表面微粗化技术、芯片非极性面/半极性面生长技术、倒装芯片技术、生长分布布喇格反射层(DBR)结构、激光剥离技术,纳米压印与SU8胶相结合技术、光子晶体技术等。In recent years, semiconductor lighting （light-emitting-diode） technology and the industry have gained a great development around the world. The pace of replacing traditional incandescent light becomes quick and the relative research, world＇s research hotspots, aroused greatest interest for many scientists. However the LED light quantum efficiency and the high cost are still the large barrier or a stumbling block for LED green lighting applications. In this paper, we provide an overview of several efficient ways to improve external quantum efficiency： including surface roughening technology, Chip/half-polar non-polar surface growth technique, flip-chip technology, distributed Bragg reflector （DBR） structure, laser Peel SU8 and nano-imprint technology combining technology, photonic crystal technology and so on.

关 键 词：半导体照明光源 表面微粗化技术 倒装芯片技术 激光剥离技术 

分 类 号：TN312.8[电子电信—物理电子学]