P型Ga_2Te_5基化合物的热电性能(英文)  

Thermoelectric Properties of P-Type Ga_2Te_5 Based Compounds

作　　者：付红[1,2] 应鹏展[2] 崔教林[3] 张晓军[2] 颜艳明[2] 

机构地区：[1]江苏建筑职业技术学院,江苏徐州221116 [2]中国矿业大学,江苏徐州221116 [3]宁波工程学院,浙江宁波315016

出　　处：《稀有金属材料与工程》2012年第5期767-771,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China (50871056);National High-Tech.Research and Development Program of China ("863" Program) (2009AA03Z322)

摘　　要：采用放电等离子烧结技术(SPS)制备P型复相Ga2Te5基化合物,对其进行微观分析和热电性能测试。通过XRD分析观察到主相Ga2Te5和少量的SnTe、单质Te。在整个测试温度(319～549K)范围内,Ga2Te5基化合物的Seebeck系数、电导率和热导率都随温度的升高而降低。由于具有相对较低的热导率和较高的电导率,Ga2SnTe5在549K时取得了最高ZT值0.16。P-type Ga2Te5 based compounds with multiphase equilibrium were prepared by spark plasma sintering and their microstructures and thermoelectric properties were evaluated in the temperature range from 319 K to 549 K.Through XRD analysis,we observed the main phase Ga2Te5,a small amount of SnTe and single element Te were observed.Results indicate that the Seebeck coefficients increase and the electrical and thermal conductivities decrease with the increase of the temperature in the entire temperature range.The highest thermoelectric figure of merit ZTof 0.16 can be achieved for Ga2SnTe5 at 549 K due to relatively low thermal conductivity and high thermal conductivity.

关 键 词：热电性能 Ga2Te5基化合物 放电等离子烧结 

分 类 号：O614.371[理学—无机化学]