GaAs双光子诱导光吸收对调Q激光器脉冲的影响  

Effects of Two-photon Induced Light Absorption of GaAs on Laser Emission

作　　者：李平[1] 王青圃[1] 张其第[1] 马宝民[1] 李颖 黄伯标[3] 刘续民 

机构地区：[1]山东大学光学系,济南250100 [2]山东临沂交通技校,临沂225206 [3]山东大学晶体材料研究所,济南250100

出　　处：《量子电子学报》2000年第2期145-149,共5页Chinese Journal of Quantum Electronics

基　　金：国家教委博士点基金;山东大学晶体材料研究所国家重点实验室开放基金

摘　　要：研究了利用 ＧａＡｓ的双光子诱导吸收实现调Ｑ激光脉冲展宽的原理，分析了 ＧａＡｓ的光吸收特性，建立了激光器速率方程并给出了数值解．在实验上，将 ＧａＡｓ薄片放入一电光调ＱＮｄ：ＹＡＧ激光器谐振腔中，同理论预测一样，激光输出脉冲的能量、峰值功率都低于常规调Ｑ激光脉冲，同时脉冲宽度得到了展宽．We have demonstrated the theory of utilizing internal two-photon-induced light absorption of semiconductor GaAs to accomplish Q-switched pulse lengthen- ing.The rate equations are solved and the experiments are performed with an electrooptic Q-switching Nd:YAG laser with a GaAs sample in its cavity. As pre- dicted by the theory that the output intensity and output energy both decrease and pulse length increases as compared with the normal Q-switched case. We were able to obtain pulses as long as 1μs.

关 键 词：双光子诱导光吸收 调Q激光器 脉冲 砷化镓 

分 类 号：TN248.34[电子电信—物理电子学]