Ni_(50.3)Mn_(27.3)Ga_(22.4)磁性形状记忆合金薄膜的磁场增强马氏体相变应变研究  

Research on Magnetic Field Enhancement Effect to Martensitic Transformation Strain of Ni_(50.3)Mn_(27.3)Ga_(22.4) Magnetic Shape Memory Alloy Thin Film

作　　者：刘超[1] 牟海维[1] 孙祺[1] 张坤[1] 

机构地区：[1]东北石油大学电子科学学院,大庆163318

出　　处：《科学技术与工程》2012年第16期3827-3830,共4页Science Technology and Engineering

基　　金：国家自然科学基金项目(51101027);黑龙江省留学归国科学基金项目(LC2009C11);黑龙江省高校青年学术骨干支持项目(1251G004);黑龙江省教育厅科技项目(12511004)资助

摘　　要：采用磁控溅射方法制备Ni50.3Mn27.3Ga22.4磁性形状记忆合金薄膜。研究薄膜的晶体结构、磁化行为以及磁场对马氏体相变应变的影响。试验结果表明,经823 K退火1 h的Ni50.3Mn27.3Ga22.4薄膜,室温下处于奥氏体态,呈较强的(110)织构特性,且室温饱和磁化强度约为40 emμ/g。试验还发现,当沿膜面方向施加0到0.8 T磁场时,Ni50.3Mn27.3Ga22.4薄膜的马氏体相变应变量随磁场强度的增大而增大,呈现出磁场增强马氏体相变应变效应。The Ni50.3 Mn27.3 Ga22.4 magnetic shape memory alloy thin film has been prepared by using magnetron sputtering method. The crystallographic structure, magnetization behavior and effect of the external magnetic field on martensitic transformation strain have been systematically investigated. The results show that the Ni50.3Mn27.3 Ga22.4 alloy thin film annealed at 823 K for 1 hour is at austenite phase state at room temperature, dis-playing a strong （ 101 ） texture. And the saturated magnetization of the thin film is approximately 40 emμ/g at room temperature. It is also found that martensitic transformation strain of the thin film under the application of the exter-nal magnetic field from 0 T and 0. 8 T along film plane increases with increasing magnetic field, showing magnetic field enhancement effect to martensitic transformation strain.

关 键 词：NIMNGA 形状记忆合金 薄膜 马氏体相变 

分 类 号：TG111.92[金属学及工艺—物理冶金]