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出 处:《江苏医药》2012年第10期1130-1132,共3页Jiangsu Medical Journal
摘 要:目的探讨S100B在早期放射性脑损伤中的变化特征。方法对大鼠予4MeV电子线分别单次全脑照射2、10、30Gy制备大鼠早期放射性脑损伤模型。应用免疫组织化学技术观察大鼠全脑不同剂量照射后1个月内不同时间点脑组织中S100B的变化。结果大鼠全脑照射后,脑组织中S100B表达水平随照射剂量加大而增加。结论全脑照射后,高照射剂量脑组织的S100B呈高表达。Objective To investigate the changes of S100B protein expression in the brain after whole-brain irradiation in rats. Methods A model of brain irradiation-induced injuries was established in SD rats after whole-brain irradiation with a single dose of 2, 10 or 30 Gy of 4 MeV electron. The expression of S100B in brain tissues was analyzed by immunohistochemistry at 1,6,12 and 24 h, 3 d, and 1 month after irradiation. Results The expression of S100B in the brain increased as the dose of irradiation increased. Conclusion After whole-brain irradiation, the higher the dose of irradiation, the higher the S100B protein expression in the brain.
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