SiO2/HfO2高反射膜的研制  

Preparation of SiO_2/HfO_2 high reflectors

作　　者：程鑫彬[1,2] 沈正祥[1,2] 焦宏飞[1,2] 马彬[1,2] 张锦龙[1,2] 丁涛[1,2] 王占山[1,2] 

机构地区：[1]同济大学物理系先进微结构材料教育部重点实验室,上海200092 [2]同济大学精密光学工程技术研究所,上海200092

出　　处：《强激光与粒子束》2012年第6期1276-1280,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(61008030);教育部博士点基金项目(20100072120037);上海市晨光计划项目(10CG19)

摘　　要：主要讨论了电子束蒸发SiO2/HfO2薄膜的面形控制和损伤性能。研究了电子束蒸发工艺参数对薄膜应力以及面形的影响;分析了制备工艺对薄膜吸收、节瘤缺陷密度的影响,测量了制备薄膜的损伤阈值。研究结果表明:调整SiO2蒸发时的氧分压可以有效地将薄膜的应力控制在-250～-50 MPa。同时采用金属Hf蒸发可以显著地将节瘤缺陷密度从12.6mm-2降低至2.7mm-2,同时将损伤阈值从30J/cm2提高至55J/cm2。The paper mainly discusses how to control the surface flatness and to improve the laser induced damage threshold（LIDT） of electron-beam evaporated SiO2/HfO2 high reflectors.The deposition parameters were optimized to control the film stress and wavefront distortion,and to reduce the film absorption,to decrease the defect density.The LIDT of the prepared films was also measured.The experimental results show that adjusting the pressure during SiO2 evaporation can control the film stress within the range of-250 to-50 MPa.Using hafnium and silica as starting materials can reduce the defect density from 12.6 to 2.7 mm-2 and increase the LIDT from 30 to 55 J/cm2.

关 键 词：应力 面形 吸收 节瘤缺陷 预处理 激光损伤 

分 类 号：TN246[电子电信—物理电子学]