基于负电容补偿技术的CMOS低噪声放大器设计  

Design of a CMOS LNA Based on Negative Capacitance Compensation

作　　者：舒应超[1] 赵吉祥[1] 李云峰[1] 

机构地区：[1]中国计量学院信息工程分院,杭州310018

出　　处：《微电子学》2012年第3期318-322,326,共6页Microelectronics

基　　金：浙江省自然科学基金资助项目"无线通信系统无源互调产生机理及测试方法研究"(Y1110082)

摘　　要：利用负电容电路补偿技术,设计了一个工作于2.4GHz频段的差分低噪声放大器。基于CHRT 0.25μm RF CMOS工艺,对电路进行仿真。与传统的共源共栅结构相比,引入负电容电路对共源管的栅漏寄生电容进行补偿,可以使放大器的匹配度、噪声系数、线性度等关键性能指标得到显著改善。仿真结果显示,该放大器的正向功率增益为17.7dB,噪声系数为1dB,IIP3为-4.9dBm,功耗为25mW,具有良好的输入输出匹配。A low noise amplifier （LNA） operating at 2.4 GHz band was designed using negative capacitance cir cuit （NCC） compensation. The circuit was implemented in CHRT 0. 25μm RF CMOS process. Compared with the conventional cascode LNA, a negative capacitance circuit was used in the new I.NA to compensate gate-drain para- sitic capacitance of the common source stage, which significantly improved key parameters of the amplifier, such as matching, noise figure and linearity etc. Simulation results showed that the I.NA had a forward power gain of 17.7 dB, a noise figure of 1 dB, an IIP3 of 4.9 dB, and good input/output impedance matching, while consuming 25 mW of power.

关 键 词：低噪声放大器 负电容电路 CMOS 

分 类 号：TN722.3[电子电信—电路与系统]