5GHz0.18μm CMOS宽带LC VCO  

A 5 GHz Broadband LC VCO in 0.18-μm CMOS Process

作　　者：邓翔[1] 段吉海[1] 杨丽燕[1] 李石林[1] 

机构地区：[1]桂林电子科技大学信息与通信学院,广西桂林541004

出　　处：《微电子学》2012年第3期372-375,共4页Microelectronics

基　　金：国家自然科学基金资助项目(61161003;61166004)

摘　　要：采用0.18μm RF CMOS工艺,设计了一个5GHz的宽带电感电容压控振荡器。该压控振荡器的电路结构选用互补交叉耦合型,采用噪声滤波技术降低相位噪声,并采用开关电容阵列扩展其调谐范围。后仿真结果表明,实现了4.44～5.44GHz的宽调谐。振荡器的电源电压为1.8V,工作电流为2.78mA,版图面积为0.37mm2。A 5 GHz LC VC（） with wide tuning range was designed in 0. 18μm RF CMOS process. In this VCO, a complementary cross couple structure was utilized, and a noise filter was used to reduce phase noise. In addition, a switched capacitor array was also used to extend its tuning range. Results from post layout simulation showed that the VCO achieved a wide tuning range from 4. 44 GHz to 5.44 GHz. The circuit consumed 2.78 mA of power from a 1.8 V supply. The LC VCO occupied a chip area of 0.37 mm2.

关 键 词：电感电容压控振荡器 CMOS电路 相位噪声 

分 类 号：TN453[电子电信—微电子学与固体电子学]