一种深亚微米CMOS工艺驱动电感式互联缓冲器工作模式的研究  

Analysis of Operating Mode of A Deep-submicron CMOS Buffer Driving Inductive Interconnects

作　　者：张东海[1] 令文生[1] 

机构地区：[1]西安微电子技术研究所,西安710054

出　　处：《科学技术与工程》2012年第17期4295-4299,共5页Science Technology and Engineering

摘　　要：研究了互补金属-氧化物半导体(CMOS)的栅极驱动电阻-电感-电容(RLC)互联的实际工作模式。采用α-指数模型,对深亚微米CMOS线驱动器晶体管工作区内的片上互联电感效应进行了分析。这项研究表明在缓冲区切换时,线性和饱和的工作模式有可能同时存在,因而饱和区和线性区模型都不能单独用来表征晶体管的工作模式。还提出了一种工作在饱和区的线驱动器的MOS管开关时间部分的计算效率的闭合表达式。相比较具有较宽范围行参数的SPICE仿真来说,提出的公式具有15%的准确性,特别适合CAD工具的实施。The actual operation of a complementary metal-oxide-semiconductor（CMOS） gate driving long resistance-inductance-capacitance（RLC） interconnects is investigated.Using the alpha-law model,inductance effects of long on-chip interconnects on the operating region of submicron CMOS line-driver lransistors are analysed.The study demonstrates that both the linear and the saturation modes of operation may be equally present during buffer switching and thus neither saturation region nor linear region model can be used solely to characterise the operation of the transistors.A computationally efficient closed form expression for the poltion of the switching time the MOS transistors of a line driver actually operate in the saturation region is also presented.Proposed formulae,particularly suitable for CAD tools implementation,is characterised by a 15% accuracy as compared to SPICE simulations for a wide range of line parameters.

关 键 词：深亚微米CMOS缓冲器 感性互联 传输线 估算表达式 

分 类 号：TN47[电子电信—微电子学与固体电子学]