Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells  

作　　者：陈峻 范广涵 庞玮 郑树文 张运炎 

机构地区：[1]Institute of Opto-Electronic Materials and Technology,South China Normal University [2]Experimental Teaching Center,Guangdong University of Technology [3]Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology

出　　处：《Chinese Optics Letters》2012年第6期67-71,共5页中国光学快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No. 61176043);the Fundfor Strategic and Emerging Industries of Guangdong Province (No. 2010A081002005);the Project of Combination of Production and Research by Guangdong Province and Ministry of Education of China (No.2010B090400192)

摘　　要：Designs of p-doped in quantum well （QW） barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes （LEDs）. Emission spectra, carrier concentration, electron current density, and internal quantum efficiency （IQE） are studied numerically. Simulation results show that the efficiency droop and the spectrum intensity at the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when a specific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection efficiency could be one of the main reasons for these improvements.Designs of p-doped in quantum well （QW） barriers and specific number of vertically stacked QWs are proposed to improve the optical performance of GaN-based dual-wavelength light-emitting diodes （LEDs）. Emission spectra, carrier concentration, electron current density, and internal quantum efficiency （IQE） are studied numerically. Simulation results show that the efficiency droop and the spectrum intensity at the large current injection are improved markedly by using the proposed design. Compared with the conventional LEDs, the uniform spectrum intensity of dual-wavelength luminescence is realized when a specific number of vertically stacked QWs is adopted. Suppression of electron leakage current and the promotion of hole injection efficiency could be one of the main reasons for these improvements.

关 键 词：Emission spectroscopy Gallium alloys Gallium nitride Phosphorus Semiconductor quantum wells SPECTROMETRY 

分 类 号：TN312.8[电子电信—物理电子学] TN304.21