忆阻器阻变随机存取存储器及其在信息存储中的应用  

Memristor-based RRAM with applications

作　　者：段书凯[1,2] 胡小方[1] 王丽丹[1] 李传东[3] MAZUMDER Pinaki 

机构地区：[1]西南大学电子信息工程学院,重庆400715 [2]Department of Electrical Engineering and Computer Science, University of Michigan [3]重庆大学计算机学院,重庆400044

出　　处：《中国科学：信息科学》2012年第6期754-769,共16页Scientia Sinica(Informationis)

基　　金：国家自然科学基金(批准号:60972155;61101233;60974020);重庆市自然科学基金(批准号:CSTC2009BB2305);中央高校基本科研业务费专项(批准号:XDJK2012A007;XDJK2010C023);重庆市高等学校青年骨干教师资助计划(渝教人(2011)65号);重庆市高等学校优秀人才支持计划(渝教人(2011)65号);西南大学博士科研资助项目(批准号:SWUB2008074);西南大学教育教学改革研究项目(批准号:2009JY053;2010JY070)资助;中国博士后科学基金(批准号:CPSF20100470116);重庆市高等教育教学改革研究重点项目(批准号:09-2-011)

摘　　要：忆阻器具有依赖于激励历史的动态电阻,可以用来构造少晶体管的非易失性半导体存储器(NVSM),也称为阻变随机存取存储器(RRAM).本文提出了一种基于忆阻器的阻变随机存取存储器(MRRAM)——可与现代计算系统相兼容的纳米级二值存储器实现方案,其结构与静态随机存取存储器(SRAM)类似,但用忆阻器替代基本RS触发器存储信息.在此基础上,通过改进该MRRAM,可以实现在一个存储单元中存储多比特信息(以灰度级形式)的多值存储器,大大提高了存储密度.给出的计算机仿真和数值分析验证了本方案在存储ASCII字符和图像中的有效性,探讨了灰度图像存储的新方法.Recently acclaimed the fourth fundamental circuit element, the memristor was theoretically predicted by Leon Chua in 1971, although its single device electronic implementation eluded the attention of integrated circuit designers for the past three decades and was first reported in 2008 by the Hewlett-Packard （HP） Laboratory researchers while developing crossbar-based ultra high-density nonvolatile memories. Memristor-based hybrid nanoscale CMOS technology is expected not only to impact the flash memory industries profoundly, but also to revolutionize digital and neuromorphic computing. The memristor exhibits a dynamical resistance state that depends on its excitation history and which can be exploited to build transistor-less nonvolatile semiconductor memory （NVSM）, commonly known as resistive RAM （RRAM）. This paper addresses an implementation scheme for memristor-based resistive random access memory （MRRAM）, a nano-scale binary memory that is compatible with modern computer systems. Its structure is similar to that of static random access memory （SRAM）, but with the memristor replacing the underlying RS flip-flop. By improving the MRRAM, we propose a multilevel memory with greater data density, which stores multiple bit information in gray-scale form in a memory unit.Reported computer simulations and numerical analyses verify the effectiveness of the proposed scheme in storing ASCII characters and gray-scale images in binary format.

关 键 词：忆阻器 阻变随机存取存储器(RRAM) 电路设计 二值存储 多值存储 计算机仿真 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]