1.06μm InGaAs/InGaAsP量子阱半导体激光器的温度特性  

Temperature Characteristic of 1.06 μm InGaAs/InGaAsP Quantum Well Laser Diode

作　　者：李再金[1] 芦鹏[1] 李特[1] 曲轶[1] 薄报学[1] 刘国军[1] 马晓辉[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《发光学报》2012年第6期647-650,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61107054);吉林省科技发展计划(201201124)资助项目

摘　　要：研究了1.06μm InGaAs/InGaAsP量子阱半导体激光器厘米bar模块的温度特性,测试分析了该模块的输出光功率、阈值电流、转换效率和光谱随注入电流及管芯温度变化的特性。结果表明,器件在15～55℃范围内所测的输出光功率由40.7 W降低到29.4 W,阈值电流由9.29 A升高到17.24 A,转换效率由54.22%降低到37.55%,光谱漂移为0.37 nm/℃,特征温度为68.6 K。实验结果表明,为保持器件性能的稳定,在实际应用过程中应该使器件的温度控制在15～25℃范围内。The temperature characteristic of 1.06 μm InGaAs/InGaAsP quantum well laser diode was studied. The output optical power, threshold current, conversion efficiency and spectra of the module were measured and analyzed when the module was operated with different current at different temperature. The results show that the module＇s characteristic changes with the temperature in the range of 15 ℃ to 55 ℃. The module＇s CW output optical power reduced from 40.7 W to 29.4 W. The threshold current increased from 9.29 A to 17.24 A. The conversion efficiency reduced from 54.22% to 37.55%. The lasing wavelength shift is 0.37 nm/℃ and the characteristic temperature is 68.6 K. The temperature of the device in the actual application process should be controlled in the range of 15℃ to 25 ℃ to maintain the stability of the device performance.

关 键 词：半导体激光器 1.06μm 阈值电流 温度特性 

分 类 号：TN248.4[电子电信—物理电子学]