MOCVD法生长ZnO薄膜时氧源t-BuOH和H2O的比较研究  

Comparison The Effect of t-BuOH and H_2O as O Precursors on ZnO Films Grown by MOCVD Method

作　　者：朱顺明[1] 黄时敏[1] 顾书林[1] 朱振邦[1] 顾然[1] 郑有炓[1] 

机构地区：[1]南京大学电子科学与工程学院南京微结构国家实验室,江苏南京210093

出　　处：《发光学报》2012年第6期665-668,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61025020,60990312);国家“973”计划(2011CB302003);江苏省自然科学基金(SBK201121728)资助项目

摘　　要：以活性较低的叔丁醇(t-BuOH)和水(H2O)作为氧源,采用MOCVD技术生长了ZnO薄膜。研究发现,t-BuOH作为氧源可以有效地抑制其与锌源之间的气相预反应,比H2O作为氧源进行ZnO薄膜的外延生长具有更高的生长速率,得到的ZnO薄膜晶体质量更优,同时载流子的迁移率可以达到37.0 cm2.V-1.s-1,表明t-BuOH更适合作为氧源通过MOCVD系统生长ZnO薄膜。The behaviors of ZnO films using t-BuOH and H2O as oxygen precursors were investigated. Despite the fact that both t-BuOH and H2O are of lower activity, the ZnO epilayer has a higher growth rate when t-BuOH is used as oxygen precursor, due to its more effective prevention of the gas phase pre-reaction. Compared with H2O, ZnO epilayer get a better crystal quality by using t-BuOH as oxygen precursor. And the Hall mobility up to 37.0 cm2 V- 1 · S- 1 is achieved in the flim where t-BuOH is used as oxygen precursor. The research shows that t-BuOH is more suitable for ox- ygen precursor of the MOCVD growth of ZnO epilayer.

关 键 词：ZnO MOCVD 氧源 t-BuOH 

分 类 号：TN304[电子电信—物理电子学]