Simultaneous quality improvement of the roughness and refractive index of SiC thin films  

作　　者：Gh.Sareminia H.Simchi A.Ostovari L.Lavasanpour 

机构地区：[1]Semiconductor Science and Technology(SST) [2]Department of Physics,Iran University of Science and Technology

出　　处：《Journal of Semiconductors》2012年第6期6-9,共4页半导体学报（英文版）

摘　　要：We deposite silicon carbide thin layers on cleaned Si（100） substrates using the plasma enhanced chemical vapor deposition method,and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. It is shown that both the deposition rate and the uniformity of the thin films are decreased by increasing the substrate temperature,and that the refractive index is increased by increasing the substrate temperature.This shows that there is a trade-off between the quality improvement of the uniformity and refractive index.We deposite silicon carbide thin layers on cleaned Si（100） substrates using the plasma enhanced chemical vapor deposition method,and show that the RFTIR spectrum is periodic in the near and medium infrared ranges. It is shown that both the deposition rate and the uniformity of the thin films are decreased by increasing the substrate temperature,and that the refractive index is increased by increasing the substrate temperature.This shows that there is a trade-off between the quality improvement of the uniformity and refractive index.

关 键 词：SiC PECVD RFTIR thickness measurement refractive index 

分 类 号：TN304.055[电子电信—物理电子学]