A 150%enhancement of PMOSFET mobility using hybrid orientation  

作　　者：唐昭焕 谭开洲 崔伟 张静 钟怡 徐世六 郝跃 张鹤鸣 胡辉勇 张正璠 胡刚毅 

机构地区：[1]Science and Technology on Analog Integrated Circuit Laboratory [2]Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp [3]Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University

出　　处：《Journal of Semiconductors》2012年第6期20-23,共4页半导体学报（英文版）

基　　金：supported by the National Basic Research Program of China(No.61398)

摘　　要：A high-performance PMOSFET based on silicon material of hybrid orientation is obtained.Hybrid orientation wafers,integrated by（100） and（110） crystal orientation,are fabricated using silicon-silicon bonding, chemical mechanical polishing,etching silicon and non-selective expitaxy.A PMOSFET with W/L = 50μm/8μm is also processed,and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7%and 150%at V_（gs） =-15 V and V_（ds） =-0.5 V,respectively.The mobility values are higher than that reported in the literature.A high-performance PMOSFET based on silicon material of hybrid orientation is obtained.Hybrid orientation wafers,integrated by（100） and（110） crystal orientation,are fabricated using silicon-silicon bonding, chemical mechanical polishing,etching silicon and non-selective expitaxy.A PMOSFET with W/L = 50μm/8μm is also processed,and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7%and 150%at V_（gs） =-15 V and V_（ds） =-0.5 V,respectively.The mobility values are higher than that reported in the literature.

关 键 词：hybrid orientation non-selective expitaxy carrier mobility （110） crystal orientation PMOSFET chemical mechanical polishing 

分 类 号：TN386[电子电信—物理电子学]