Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias  

作　　者：肖文波 何兴道 高益庆 张志敏 刘江涛 

机构地区：[1]Key Laboratory of Non-Destructive Test of Ministry of Education,Nanchang Hangkong University [2]Department of Physics,Nanchang University

出　　处：《Journal of Semiconductors》2012年第6期47-50,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.10904059,4106600 l,61072131,61177096);the Aeronautical Science Foundation of China(No.2010ZB56004);the Scientific Research Foundation of Jiangxi Provincial Department of Education(No. GJJ11176);the Open Fund of the Key Laboratory of Nondestructive Testing of Ministry of Education,Nanchang Hangkong University (No.ZD201029005);the Natural Science Foundation of Jiangxi Province,China(Nos.2009GQW0017,2009GZW0024);the Graduate Innovation Base of Jiangxi Province,China

摘　　要：The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions.An electroluminescence viewgraph shows the clear device structures,and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current.The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells.The good fit between the measured and calculated data proves the above conclusions. This work is of guiding significance for current solar cell testing and research.The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions.An electroluminescence viewgraph shows the clear device structures,and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current.The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells.The good fit between the measured and calculated data proves the above conclusions. This work is of guiding significance for current solar cell testing and research.

关 键 词：triple-junction solar cell electroluminescence characteristics 

分 类 号：TM914.4[电气工程—电力电子与电力传动]