纳秒脉冲激光制备的纳米硅光致发光研究  

PL Spectra of Silicon Nanocrystal Prepared by Pulse Laser

作　　者：苏琴[1] 黄伟其[1] 陈汉琼[1] 陈洪福[1] 刘盛华[1] 吴红英[1] 张桂阳[1] 高贵平[1] 

机构地区：[1]贵州大学纳米光子物理研究所,光电子技术与应用省重点实验室,贵阳550025

出　　处：《贵州科学》2012年第3期14-17,共4页Guizhou Science

基　　金：国家自然科学基金(批准号:60966002)资助的课题

摘　　要：在氧气、空气或氮气环境中,用脉冲激光辐照加工出的纳米硅有较强的PL发光,将这些PL光谱进行高斯去卷积处理,可以得到不同的子峰,这是因为在氧气、空气或氮气中加工出的纳米硅能带带隙中有与氧和氮有关的局域态。结合计算结果,在纳米硅中Si=O双键和Si-N键等可引入的局域态对PL发光有贡献。There is a strong PL in silicon nanocrystals prepared by ns pulsed laser under the oxygen, air- gen. After Gaussian de-convolution of the PL spectra has been performed, different Gaussian peaks can be ob- tained, because there are Localized states related to oxygen and nitrogen in band gap of silicon nanocrystals pre- pared under oxygen, air or nitrogen. Combining with the calculation results, We found that localized states intro- duced by Si = 0 and Si-N in silicon nanocrystals make contributions to the PLemission.

关 键 词：纳米硅 光致发光 发光中心 

分 类 号：O433.54[机械工程—光学工程]