高性能顶栅结构有机薄膜晶体管  

High Performance Organic Thin Film Transistor Based on Top-Gate Configuration

作　　者：洪飞[1] 谭莉[1] 朱棋锋[1] 向长江[1] 韩学斌[1] 张其国[1] 郭晓东[1] 申剑锋[1] 

机构地区：[1]中国科学院上海高等研究院新型显示技术研究中心,上海201210

出　　处：《液晶与显示》2012年第3期313-317,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：上海市科委科研项目(No.10dz1100300)

摘　　要：采用六联苯(p-6P)和氧钒酞菁(VOPc)作为有源层材料,利用弱外延生长技术制备有机薄膜晶体管(OTFT)。在相同的工艺条件下制备了顶栅结构(top-gate)和底栅结构(bottom-gate)两种器件构型,发现两种不同结构的OTFT器件特性存在较大的差异,top-gate OTFT的迁移率比bottom-gate OTFT高很多。在顶栅结构的器件构型中获得了较高的器件特性参数,迁移率达到1.6cm2/V.s。研究了弱外延生长技术应用在两种不同器件构型中的差异,并解释了顶栅结构OTFT迁移率较高的原因。Organic thin film transistors based on Weak Epitaxy Growth （WEG） technology are fabricated with two different design： top gate and bottom-gate configurations. The active layer materials of the OTFT are p-6P and vanadyl phthalocyanine （VOPc）. The two struc- tural OTFTs are prepared under the same process conditions, and it is found that the device performance is different. The mobility of top-gate OTFT is much higher than that of the bottom-gate OTFT. A high mobility of 1.6 cm2/V·s is obtained in the top-gate structure. The differentiation of top-gate and bottom-gate OTFTs is studied by Weak Epitaxy Growth （WEG） ration is technology, and the reasons of higher mobility OTFT based on the top-gate configu explained.

关 键 词：有机薄膜晶体管 顶栅结构 弱外延 氧钒酞菁 

分 类 号：TN321.5[电子电信—物理电子学]