半导体/介质纳米颗粒镶嵌材料中光致载流子弛豫过程的研究进展  

Progress of Studies on the Relaxation Processes of Photoinduced Carriers in Semiconductor Nano granular Embedded in Medium Matrix

作　　者：丁瑞钦[1] 杨恢东[1] 王浩[1] 周国荣[1] 

机构地区：[1]五邑大学数学物理系,广东江门529020

出　　处：《半导体技术》2000年第2期1-6,共6页Semiconductor Technology

基　　金：国家自然科学基金!( 6980 60 0 8);广东省自然科学基金!( 970 716)

摘　　要：从全光通信对光子器件的要求出发 ,报道了近年来在半导体 /介质纳米颗粒镶嵌材料中光致载流子弛豫过程的研究进展。强量子限制效应可以大大地减小激子的寿命 ,但这种材料 ( - 族例外 )普遍存在着长寿命的俘获态 。This paper reports the recent advance of studies on the relaxation processes of photoinduced carriers in semiconductor nano granular embedded in medium matrix according to the requirement of all optics communications.The life time of exciton can be diminished significantly due to the strong quantum confinement.However,there are a lot of trapped states existing which have long life time and restrict the optical response speed of the materials(except group Ⅰ Ⅶ semiconductors).

关 键 词：半导体纳米颗粒 光致载流子 驰豫过程 光通信 

分 类 号：O431[机械工程—光学工程] TN304[理学—光学]