The growth and properties of an m-plane InN epilayer on LiAlO_2 (100) by metal-organic chemical vapor deposition  

作　　者：XIE ZiLi ZHANG Rong FU DeYi LIU Bin XIU XiangQian HUA XueMei ZHAO Hong CHEN Peng HAN Ping SHI Yi ZHENG YouDou 

机构地区：[1]School of Electronics and Engineerings,Nanjing University,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Mate-rials,National Laboratory of Solid State Microstructures,Nanjing 210093,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2012年第7期1249-1252,共4页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the Special Funds for the Major State Basic Research Project (Grant No. 2011CB301900);the High-Tech Research Project (Grant No. 2011AA03A103);the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60721063,60906025, 60936004 and 61176063);the Natural Science Foundation of Jiangsu Province (Grant Nos. BK2011010, BK2009255, BK2010178 andBK2010385);the Research Funds from NJU-Yangzhou Institute of Opto-electronics

摘　　要：The m-plane InN （1 100） epilayers have been grown on a LiAlO2 （1 0 0） substrate by a two-step growth method using a met- al-organic chemical vapor deposition （MOCVD） system. The low temperature InN buffer layer （LT-InN） is introduced to overcome the drawbacks of thermal instability of LiAlO2 （LAO） and to relieve the strains due to a large thermal mismatch be- tween LAO and InN. Then the high temperature m-plane InN （1 1 00） epilayers （HT-InN） were grown. The results of X-ray diffraction （XRD） suggest that the m-plane InN （1 1 00） epilayer is a single crystal. The X-ray rocking curves （co scans） （XRC） and atomic force microscopy （AFM） indicate that the m-plane InN （1 1 00） epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K.The m-plane InN (1100) epilayers have been grown on a LiAlO2 (100) substrate by a two-step growth method using a metal-organic chemical vapor deposition (MOCVD) system. The low temperature InN buffer layer (LT-InN) is introduced to overcome the drawbacks of thermal instability of LiAlO2 (LAO) and to relieve the strains due to a large thermal mismatch between LAO and InN. Then the high temperature m-plane InN (1100) epilayers (HT-InN) were grown. The results of X-ray diffraction (XRD) suggest that the m-plane InN (1100) epilayer is a single crystal. The X-ray rocking curves (scans) (XRC) and atomic force microscopy (AFM) indicate that the m-plane InN (1100) epilayer has anisotropic crystallographic properties. The PL studies of the materials reveal a remarkable energy band gap structure around 0.70 eV at 15 K.

关 键 词：crystal structure X-ray diffraction vapor-phase epitaxy INN semiconducting indium compound 

分 类 号：TN304.055[电子电信—物理电子学]