逆境处理下水稻叶角质层蜡质积累及其与蜡质合成相关基因OsGL1表达的关系  被引量:24

Effect of Stresses on Leaf Cuticular Wax Accumulation and Its Relationship to Expression of OsGL1-Homologous Genes in Rice

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作  者:周玲艳[1,2] 姜大刚[2] 李静[2] 周海[2] 曹伟炜[2] 庄楚雄[2] 

机构地区:[1]仲恺农业工程学院生命科学学院,广东广州510225 [2]华南农业大学生命科学学院,广东广州510642

出  处:《作物学报》2012年第6期1115-1120,共6页Acta Agronomica Sinica

基  金:广东省自然科学基金项目(S2011040001653)资助

摘  要:植物角质层蜡质在抵抗各种生物和非生物胁迫中起着非常重要的作用。本试验以水稻(Oryza sativa L.)幼苗为材料,分别以200mmol L-1 NaCl、12%PEG、1.0%H2O2、40℃高温和8℃低温为逆境,研究叶角质层蜡质的积累情况以及其与水稻蜡质合成相关基因OsGL1表达的关系。扫描电镜观察以及叶角质层蜡质总量测定结果表明,12%PEG、1.0%H2O2和8℃低温处理下水稻幼苗叶角质层蜡质的积累明显增加,而200mmol L-1 NaCl和40℃高温处理下叶角质层蜡质覆盖量略有下降。RT-PCR分析显示,逆境处理下水稻蜡质合成相关基因OsGL1的表达量变化与水稻幼苗叶角质层蜡质的积累存在相关性。The outermost surfaces of land plants are covered with a cuticular wax layer which plays a very critical role in defense against biotic and abiotic stresses. GLOSSY1 (GL1) is a wax biosynthesis related gene and OsGL1 is a homologous gene of GL1. In this study, we discussed the leaf cuticular wax accumulation and the relationship between the leaf cuticular wax accumulation and the expression of OsGL1 in rice treated with stresses, including 200 mmol L-1 NaC1, 12% PEG, 1.0% H20〉 high temperature and low temperature in their seedling stages. The scanning electron microscopy and the cuticular wax content analysis showed that the cuticular wax accumulation on leaves significantly increased under 12% PEG, 1.0% HaO2 and low temperature treatments. However, the cuticular wax accumulation on leaves declined slightly under NaC1 and high temperature treatments. Results of RT-PCR analysis suggested that the expression of OsGL1 under stresses was associated with the accumulation of cuticular wax on leaves.

关 键 词:水稻 逆境处理 角质层蜡质 OsGL1 表达 

分 类 号:S511[农业科学—作物学]

 

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