Ⅲ-V族半导体材料组成光子晶体能态密度特性  

Ⅲ-V family of semiconductor materials photonic crystal state density characteristics

作　　者：陈士芹[1] 

机构地区：[1]临沂大学实验管理中心,山东临沂276000

出　　处：《激光杂志》2012年第3期23-24,共2页Laser Journal

基　　金：山东省2011年高等学校科技计划项目(J11LG74)

摘　　要：应用平面波展开法研究Ⅲ-V族半导体材料组成光子晶体能态密度特性,得到填充率f随晶格半径a之间的变化对应的能态密度分布,当f=0.2a时归一化频率存在最大光子带隙。通过比较化合物半导体材料为AIP、AIAs、AISb和GaP构成二维方形光子晶体得出GaP有较宽的光子禁带,随着填充率的增加光子晶体带隙增加。研究结果为光子晶体器件的研究提供理论依据。Application of the plane wave expansion method research □-□ family of semiconductor materials photonic crystal can state density, get filled with a radius of grid work rate f the variations between the corresponding state density distribution, when f = 0.2 a normalized when frequency biggest photonic band gap. Through the comparison for semiconductor compound material, AlP AIAs,AISb GaP and a 2 d square photonic crystals that has a wide GaP of the photon belt, with filling rate increase photonic crystal increase. The results of photonic crystal devices to provide the theory basis.

关 键 词：半导体材料 光子晶体 平面波展开法 能态密度 

分 类 号：TN248.1[电子电信—物理电子学]