影响多孔硅孔隙率的因素  

Influential Factors on Porosity of Porous Silicon

作　　者：涂楚辙[1] 江从春 贾振红[2] 陶明德[3] 宋世庚[3] 

机构地区：[1]新疆大学物理系,新疆乌鲁木齐830046 [2]新疆大学电子信息科学系,新疆乌鲁木齐830046 [3]中国科学院新疆物理研究所,新疆乌鲁木齐830011

出　　处：《功能材料》2000年第2期139-141,共3页Journal of Functional Materials

基　　金：国家自然科学基金;新疆自然科学基金

摘　　要：研究了在制备多孔硅过程中影响其孔隙率的各种因素 ,给出了氢氟酸浓度、腐蚀时间、阳极腐蚀电流、温度及光照度与多孔硅孔隙率的关系 ,同时研究了多孔硅的晶格常数随其孔隙率变化的规律 ,并对以上各项结果作出了初步解释。The influence of making method and formed conditions on porosity of porous silicon (PS) has been studied in this paper,and the relationships of porosity of PS to concentration of hydrofluoric acid (HF)-ethanol solution,temperature of electrolyte,etching electric current,etching temperature,and light irradiation have been provided by experiment and all the results were explained.

关 键 词：多孔硅 孔隙率 影响因素 晶格常数 

分 类 号：TN304.12[电子电信—物理电子学]