双二硫代亚乙基四硫代富瓦烯衍生物的合成及其LB膜的制备  

Synthesis of Bis-Ethylenedithio-Tetrathiafulvalene Derivatives and Preparation of Their LB-Films

作　　者：伍维成[1] 沈永嘉[1] 

机构地区：[1]华东理工大学精细化工研究所,上海200237

出　　处：《功能材料》2000年第2期200-201,共2页Journal of Functional Materials

基　　金：国家自然科学基金! ( 2 95 74 1 5 6);中国科学院有机固体开放实验室基金

摘　　要：合成了带双羟烷基及双甲酸甲酯基取代的两种双二硫代亚乙基四硫代富瓦烯 (BEDT -TTF)的衍生物及其它们与TCNQ的CT -络合物。制备了它们的LB膜并测试了膜的导电率。由于单分子膜与各层膜相比分子排列紧密程度不同 ,平行于LB膜方向的导电率比垂直于LB膜方向的导电率高近 10 7个数量级。Two kinds of bis-hydroxyalkyl or bis-methyl formylate subtituted bis-ethylenedithio-tetrathiafulvalenes (BEDT-TTF) and their charger-transfer complexes (CT-complexes ) with TCNQ were synthesized.The LB-films of the complexes were prepared and their conductivity was measured by two-probe method.The conductivity of parallel to the plane of the LB-films is 10 7 times higher than that of vertical to the plane of the LB-film.

关 键 词：四硫代富瓦烯 CT-络合物 LB膜 导电率 制备 

分 类 号：TQ324.9[化学工程—合成树脂塑料工业] TM262[一般工业技术—材料科学与工程]