PbLa(ZrSnTi)O_3弛豫反铁电单晶的畴结构与成畴机制  

Domain Structure and Mechanism of PbLa (ZrSnTi)O_3 Relaxor Antiferroelectric Single Crystal

作　　者：杨子[1] 李强[1] 李媛媛[1] 张绍锋[2] 

机构地区：[1]清华大学化学系,北京100084 [2]烁光特晶科技有限公司,北京100018

出　　处：《人工晶体学报》2012年第3期559-563,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(50272030;50572048;51172118)

摘　　要：使用助熔剂法生长了PbLa(ZrSnTi)O3弛豫反铁电单晶,使用偏光显微镜对单晶中的畴进行了观察。结果表明,在(001)面上,PbLa(ZrSnTi)O3单晶中存在[110]走向和[110]走向的畴,以及[100]走向和[010]走向的亚畴。对PbLa(ZrSnTi)O3单晶的成畴机制进行了分析,引入微区应力成畴机制解释了单晶中[110]走向和[110]走向的畴结构,而对[100]走向和[010]走向的亚畴结构则要同时考虑极性微区中自发极化的影响。PbLa（ZrSnTi）O3 relaxor antiferroelectric single crystal was grown by the flux method.The domain structure was observed by the polarizing microscope.Two kinds of domain structures on the（001） face of PbLa（ZrSnTi）O3 single crystal were observed.There are antiferroelectric domains along and direction,and polar sub-domain along and direction.The antiferroelectric domain along and direction structure was illustrated by the stress combination of miro-region while the formation of the polar sub-domain was attributed to the spontaneous polarization in the polar miro-region.

关 键 词：PbLa(ZrSnTi)O3单晶 畴结构 成畴机制 

分 类 号：O766[理学—晶体学]