化学浴沉积PbSe多晶薄膜制备  

PbSe Polycrystalline Film by Chemical Bath Deposition

作　　者：陈凤金[1] 司俊杰[1] 张庆军[1] 姚官生[1] 

机构地区：[1]中国空空导弹研究院,河南洛阳471003

出　　处：《航空兵器》2012年第3期47-50,共4页Aero Weaponry

基　　金：航空科学基金自由申请类项目(2007ZC12003)

摘　　要：简要介绍了国内外关于PbSe薄膜的制备方法与发展状况,分别以硒脲和硒粉为主要原料,用化学浴沉积法制备了PbSe多晶薄膜。对所制备薄膜用SEM、XRD、TEM等方法进行表征分析和对比,实验结果表明,在不考虑硒脲本身原料的纯度因素影响的情况下,以硒粉为原料制成的薄膜其晶体结构的完整性和光电导特性均优于以硒脲为原料所制成的薄膜,也验证了以硒粉为原料的低成本制备PbSe薄膜方法可行性。The synthesize process and development of the PbSe film in domestic and overseas are in- troduced simply. PbSe polycrystalline thin films are fabricated by chemical bath deposition （CBD） with selenourea and selenium, individually. The PbSe thin films are analyzed by SEM, XRD and TEM. Ex- periments indicates that crystallinity and photoelectricity properties which deposited by selenium are better than that of selenourea when the factor of material purity are ignored. The feasibility of PbSe polycrystal- line films synthesized by CBD in a low cost way with selenium is validated.

关 键 词：硒化铅 化学浴沉积 硒脲 多晶薄膜 光电导特性 

分 类 号：TN722[电子电信—电路与系统]