半抛物量子阱中折射率双峰结构改变的研究(英文)  

Double peaks of refractive index changes in semi-parabolic quantum wells

作　　者：杨晓东[1] 郭康贤[1] 

机构地区：[1]广州大学物理与电子工程学院,广东广州510006

出　　处：《广州大学学报（自然科学版）》2012年第3期39-44,共6页Journal of Guangzhou University:Natural Science Edition

基　　金：Supported by National Science Fundation of China(60878002);the Science and Technology Committee of Guangdong Province(2010A080802002,2010B080704002,2010B010800031,2010B090400130 and 8251009101000002);the Science and Technology Bureau of Guangzhou(2009J1-C421-1)

摘　　要：吸收边缘半抛物量子阱折射率的双峰结构的改变作为入射光强度的功能一直被研究,而且已经获得运用密度矩阵和迭代法所推导的关于折射率改变的公式.并呈现了在典型的AIGaAs/GaAs量子阱中所推导的数值结果.结构表明,入射光强度和半抛物量子阱的束缚频率是对折射率双峰结构的最大影响参数.Double peaks of the refractive index changes near the absorption edge in semi-parabolic quantum wells are examined as a function of the incident optical intensity, and an analytic formula for the changes in the refractive index is obtained by using the compact-density matrix approach and an iterative method. Numerical results are presented for some typical A1GaAs/GaAs quantum wells. The calculated results show that the inci- dent optical intensity and the semi-parabolic confinement frequency have a great influence on the double peaks of total refractive index changes.

关 键 词：折射率改变 半抛物量子阱 量子束缚效应 

分 类 号：O482.3[理学—固体物理]