IGBT的du／dt有源门极控制技术的研究  

Research on IGBTs' du/dt Active Gate Control

作　　者：张国安[1] 张东霞[1] 姜永金[1] 董雅丽[1] 

机构地区：[1]空军雷达学院,信息对抗系,湖北武汉430019

出　　处：《电力电子技术》2012年第6期36-38,共3页Power Electronics

摘　　要：为减小绝缘栅双极性晶体管(IGBT)的开关损耗,正常工作时要求使其快速开通和关断。但在大电流或过流情况下,快速开通和关断会导致di/dt和du/dt过大。而较大的du_(oe)/dt会使IGBT误触发导通,使得IGBT控制失效。设计了一种能控制IGBT du/dt的新型有源门极控制电路,并进行了分析。给出了仿真和实验结果,验证了新型有源门极控制电路的正确性。Insulated gated bipolar transistor（IGBT） are generally asked rapidly switched on/off to minish the switching loss.But rapid switching on/off may lead to giant dio/dt and duJdt at large current.The giant duJdt may lead IGBTs switched on by accident,then IGBTs can not be controlled rightly.A novel active gate control circuit is designed, and analyses about it are given.At last,the simulation and experimental results are presented to validate its validity.

关 键 词：绝缘栅双极性晶体管 有源门极控制 镜像电流源 耦合电容 

分 类 号：TN32[电子电信—物理电子学]