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作 者:胡耀斌[1] 刘心宇[1,2] 江民红[1] 崔业让[1]
机构地区:[1]桂林电子科技大学广西信息材料重点实验室,广西桂林541004 [2]中南大学材料科学与工程学院,湖南长沙410083
出 处:《电子元件与材料》2012年第7期8-10,14,共4页Electronic Components And Materials
基 金:广西自然科学基金资助项目(No.2010GXNSFD013007);广西信息材料重点实验室主任基金资助项目(No.桂科能0710908-15-Z)
摘 要:采用固相烧结法制备了K0.5Na0.5NbO3-LiSbO3-xBi(Fe0.9Mn0.1)O3+σ(KNN-LS-BF9M1)无铅压电陶瓷,研究了不同BF9M1掺杂量(x分别为0,0.002,0.004,0.006,0.008)对所制陶瓷的显微结构、物相组成及电性能的影响。结果表明,少量BF9M1掺杂能有效抑制KNN陶瓷晶粒的生长,促进组织致密化。当x从0增加到0.006时,样品发生正交-四方相变,同时正交-四方相变温度to-t从95℃降低到40℃;另一方面,压电性能得到明显提高、介质损耗有所降低。当x=0.006时,样品具有最好电性能:d33=260 pC/N,tanδ=2.03×10–2,kp=51.9%,εr=1 241,Qm=44.7,tC=345℃,to-t=45℃。K0.5Na0.5NbO3-LiSbO3-xBi(Fe0.9Mn0.1)O3+σ(KNN-LS-BF9M1) lead-free piezoelectric ceramics were prepared by the solid state reaction method, and the effects of BF9M1 doping amounts on the microstructures, phases and electrical properties of samples were investigated (x being 0, 0.002, 0.004, 0.006, 0.008). The results indicate that small amount of BF9M1 doping is effective for the suppression of grain growth and their densification. When x increases from 0 to 0.006, the samples exhibite a phase transition between orthorhombic and tetragonal and a downward trend of to-t from 95 ℃ to 40 ℃. Another, the piezoelectric constant d33 is enhanced and the dielectric dissipation tanδ is reduced. When x=0.006, the samples have optimal electric properties: d33= 260 pC/N, tanδ=2.03×10–2, kp=51.9%, εr=1 241, Qm= 44.7, tC =345 ℃, to-t=45 ℃.
关 键 词:无铅压电陶瓷 K0.5NA0.5NBO3 显微结构 压电性能
分 类 号:TM28[一般工业技术—材料科学与工程]
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