射频磁控溅射法制备Cu2ZnSnS4薄膜  

Preparation of Cu_2ZnSnS_4 thin films by RF magnetron sputtering

作　　者：文亚南[1] 李琳[1] 陈士荣[1] 史成武[2] 梁齐[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230009 [2]合肥工业大学化学工程学院,安徽合肥230009

出　　处：《电子元件与材料》2012年第7期47-50,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.51072043)

摘　　要：利用射频磁控溅射法在玻璃基片上制备了Cu2ZnSnS4(CZTS)薄膜,薄膜在室温下生长,再在Ar气氛中快速退火。通过X射线衍射、X射线电子能谱、原子力显微镜和吸收谱研究了退火温度对薄膜结构、组分、形貌和禁带宽度的影响。结果表明,所制备样品为Cu2ZnSnS4多晶薄膜,具有较强的沿(112)晶面择优取向生长的特点,薄膜组分均为富S贫Cu,样品表面形貌比较均匀。退火温度为350,400,450和500℃的薄膜样品的禁带宽度分别是1.49,1.53,1.51和1.46 eV。Cu2ZnSnS4 （CZTS） thin films were deposited on glass by RF magnetron sputtering method at room temperature, and annealed in Ar atmosphere rapidly. The effects of annealing temperature on the structure, composition, morphology and bandgap of CZTS films were studied by X-ray diffraction, X-ray energy disperse spectroscopy, atomic force microscopy and absorption spectrum. The results show that these prepared CZTS films are polycrystalline, which exhibit strong preferential orientation of grains along （112） plane, being S-rich and Cu-poor in composition and with a uniform surface morphology. The bandgaps of CZTS thin films annealed at 350, 400, 450 and 500 ℃ are derived to be 1.49, 1.53, 1.51 and 1.46 eV, respectively.

关 键 词：Cu2ZnSnS4 射频磁控溅射 快速退火 多晶薄膜 择优取向 

分 类 号：TN304.2[电子电信—物理电子学]