利用STM测量银纳米线的电输运性能  

Electronic tranport properties of Ag nanowires measured by STM

作　　者：香文林[1] 蒋利强[1] 蒋贤令[1] 陈雷[1] 王学伟[1] 

机构地区：[1]天津理工大学材料科学与工程学院,天津300384

出　　处：《天津理工大学学报》2012年第3期10-13,共4页Journal of Tianjin University of Technology

基　　金：国家自然科学基金(10904108);教育部大学生创新实验计划(101006004)

摘　　要：随着微电子器件的小型化,金属纳米线的电输运性能成为大家研究的目标,而如何获得一种简单快捷的测量方式又一直是研究人员关注的焦点问题.本文尝试通过利用扫描隧道显微镜(STM)的工作原理和结构特点,研究沉积在多孔氧化铝模板孔洞里银纳米线的电输运行为,获得几根银纳米线电压与电流(I-V)之间的变化曲线,并根据银纳米线形貌和结构的表征结果分析电子传输的机理.With the miniaturization of electronic devices,the research for the electronic properties of metallic nanowires are paid attention to,while it is an attractive focus problem for the researchers all along how to obtain a simple and conveniencing measurement method.In this paper,we try to make use of the working principle and structural characteristics of STM to study the electronic transport behaviors of Ag nanowires embedded in the pores of the porous anodic alumina membranes,and obtain the I-V curves of several Ag nanowires.Meanwhile,we also analyse the mechanism of electronic transport according to the results of the morphology and structure characterization.

关 键 词：纳米线 电沉积 电输运 扫描隧道显微镜 

分 类 号：O4[理学—物理]