MoO_3 as a cathode buffer layer for enhancing the efficiency in white organic light-emitting diodes  

作　　者：张静 张方辉 丁磊 李艳菲 梁田静 

机构地区：[1]School of Electric and Information Engineering,Shaanxi University of Science and Technology

出　　处：《Optoelectronics Letters》2012年第4期256-259,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61076066);the Doctor Foundation of Shaanxi University of Scienceand Technology(No.BJ09-07)

摘　　要：Molybdenum trioxide （MOO3） as a cathode buffer layer is inserted between LiF and A1 to improve the efficiency of white organic light-emitting diodes （OLEDs） in this paper..By changing the MoO3 thickness, a higher current efficiency of 5.79 cd/A is obtained at a current density of 160 mA/cm2 for the device with a 0.8 nm-thick MoO3 layer as the cathode buffer layer, which is approximately two times greater than that of the device without MoO3. The mechanism for improving the device efficiency is discussed. Moreover, at a voltage of 13 V, the device with a 0.8 nm-thick MoO3 layer achieves a higher luminance of 22370 cd/m2, and the Commission Internationale de I＇Eclairage （CIE） color coordinate of the device with 1 nm-thick MoO3 layer is （0.33, 0：34）, which shows the best color purity. Simple electron-only devices are tested to confirm the impact of the MoO3 layer on the carrier injection.

关 键 词：Buffer layers Cathodes EFFICIENCY Organic light emitting diodes (OLED) 

分 类 号：TN312.8[电子电信—物理电子学] TQ136.12[化学工程—无机化工]