基于GaAs/InAs-GaAs/ZnSe量子点太阳电池结构的优化  

Optimization of quantum dot solar cells based on structures of GaAs/InAs-GaAs/ZnSe

作　　者：姜冰一[1] 郑建邦[1] 王春锋[1] 郝娟[1] 曹崇德[1] 

机构地区：[1]西北工业大学理学院应用物理系,陕西省光信息技术重点实验室,西安710072

出　　处：《物理学报》2012年第13期527-532,共6页Acta Physica Sinica

基　　金：西北工业大学基础研究基金(批准号:JC200820;JC201268)和西北工业大学研究生创业种子基金(批准号:Z2011020)资助的课题~~

摘　　要：基于GaAs/InAs-GaAs/ZnSe的P-i-N量子点太阳电池结构,根据光学原理和扩散理论建立了光生电流密度与膜层厚度相关的数学模型,定量分析了量子点层厚度等参数对太阳电池性能的影响,以期达到提高量子点太阳电池转换效率的目的.理论模拟表明:在i层厚度取3000 nm时,优化后P(GaAs)型、N(ZnSe)型层薄膜的最佳膜厚为1541nm,78 nm,并在单一波长下太阳电池转换效率为20.1%;同时量子点体积和温度对于量子点太阳电池Ⅰ-Ⅴ特性也会产生影响,当量子点体积和温度逐渐增大时,开路电压呈现减小趋势,使得转换效率降低.Based on the structures of GaAs/InAs-GaAs/ZnSe P-i-N quantum dot solar cells, according to the optical principle and diffusion theory, mathematic model describing the relationship between photogenerated electron current density and thickness of layer is proposed, and the effect of the quantum dot layer on the characteristics of solar cell is analyzed quantitatively for improving the power conversion efficiency of quantum dot solar cells. Simulations show that the optimal thicknesses of P（GaAs） and N（ZnSe） are 1541 nm and 78 nm respectively when the i layer thickness is 3000 nm, and the power conversion efficiency of solar cell is 20.1% at a single wavelength; At the same time, the volume of quantum dot and the temperature affect I-V property of quantum dot solar cell, and the value of open voltage reduces with the increase of the volume of quantum dot and temperature, so that the power conversion efficiency will be reduced.

关 键 词：量子点 优化 能量转换效率 Ⅰ-Ⅴ特性 

分 类 号：TM914.4[电气工程—电力电子与电力传动]