有限周期含负折射率光子晶体的全反射隧穿效应  

Total Reflection Tunneling Effect of Photonic Crystal Containing Negative Refractive Index in Finite Period

作　　者：代洪霞[1] 刘启能[1] 

机构地区：[1]重庆工商大学计算机科学与信息工程学院,重庆400067

出　　处：《半导体光电》2012年第3期370-374,共5页Semiconductor Optoelectronics

基　　金：重庆市教委科技基金资助项目(KJ100717)

摘　　要：为了研究一维有限周期含负折射率光子晶体的全反射隧穿效应,利用传输矩阵法计算了TE波和TM波在大于全反射角入射一维有限周期含负折射率光子晶体的透射率。得出了一维有限周期含负折射率光子晶体中TE波和TM波的全反射隧穿峰的频率随入射角的变化特性、全反射隧穿峰的频率随负折射材料厚度的变化特性、全反射隧穿峰数随周期数的变化特性。发现了有限周期含负折射率光子晶体的全反射隧穿效应与普通光子晶体的全反射隧穿效应的不同之处。For studying total reflection tunneling effect of 1D photonic crystal containing negative refractive index, the transition matrix method was adopted and the transmissivity of wave and wave were studied when the incident angle was greater than the full reflection angle. Response curves of the tunneling frequency versus the incident angle and the medium thickness of negative refractive index were obtained. Meanwhile, the response curve of the number of tunneling peak versus that of cycles was obtained. Differences between the total reflection tunneling effects of 1D negative refractive index photonic crystal and that of ordinary photonic crystal differences were disseussed.

关 键 词：光子晶体 负折射率 全反射 隧穿效应 

分 类 号：O436[机械工程—光学工程]