Room Temperature Ferromagnetism in Ga1-xHoxN （x=0.0 and 0.05） Diluted Magnetic Semiconductor Thin Films  

作　　者：Ghulam Murtaza Rai Muhammad Azhar Iqbal Yong-bing Xu lain Gordon Will Qasim Mahmood 

机构地区：[1]Department of Physics, University of the Punjab, Lahore 54590, Pakistan [2]Spintronics Laboratory, Department of Electronics, The University of York, York Y010 5DD, UK

出　　处：《Chinese Journal of Chemical Physics》2012年第3期313-317,373,374,共7页化学物理学报（英文）

摘　　要：Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction mea- surements reveal all peaks belong to the purely hexagonal wurtzite structure. Surface mor- phology and composition analysis were carried out by scanning electron microscopy and energy dispersive spectroscopy respectively. The room temperature ferromagnetic proper- ties of Gal-xHoxN （x=0.0, 0.05） films were analyzed using vibrating sample magnetometer at room temperature. Magnetic measurements showed that the undoped films （i.e. GaN） exhibited diamagnetic behavior, while the Ho-doped （Gao.95Hoo.05N） film exhibited a ferro- magnetic behavior.

关 键 词：Diluted magnetic semiconductor Holmium doping X-ray diffraction Scan-ning electron microscopy Room temperature ferromagnetism 

分 类 号：TN304.055[电子电信—物理电子学] O482.523[理学—固体物理]