Novel high-voltage power lateral MOSFET with adaptive buried electrodes  

作　　者：章文通 吴丽娟 乔明 罗小蓉 张波 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Chinese Physics B》2012年第7期444-449,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 60906038);the Science Technology Foundation for Young Scientist of University of Electronic Science and Technology of China (Grant No. L08010301JX0830)

摘　　要：A new high-voltage and low-specific on-resistance （Ron,sp） adaptive buried electrode （ABE） silicon-on-insulator （SOI） power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide （BOX） layer, the negative drain voltage Vd is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than tile electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field EI and the breakdown voltage （BV） of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low Ron,sp is obtained. Furthermore, the structure also alleviates the self-heating effect （SHE）. The analytical model matches the simulation results.A new high-voltage and low-specific on-resistance （Ron,sp） adaptive buried electrode （ABE） silicon-on-insulator （SOI） power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide （BOX） layer, the negative drain voltage Vd is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than tile electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field EI and the breakdown voltage （BV） of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low Ron,sp is obtained. Furthermore, the structure also alleviates the self-heating effect （SHE）. The analytical model matches the simulation results.

关 键 词：adaptive buried electrode interface charge breakdown voltage enhanced dielectric layer field 

分 类 号：TN386.1[电子电信—物理电子学] O657.15[理学—分析化学]