检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
机构地区:[1]School of Electronics and Information Engineering Tianjin Polytechnic University [2]Engineering Research Center of High Power Solid State Lighting Application System [3]School of Electrical Engineering&Automation Tianjin Polytechnic University
出 处:《Chinese Physics B》2012年第7期513-517,共5页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China (Grant No. 50602018);the Natural Science Foundation of Guangdong Province, China (Grant No. 06025083);the Research Project of Science and Technology of Guangdong Province, China (Grant No. 2006A10802001);the Key Research Project of Science and Technology of Guangzhou, China (Grant No. 2005Z1-D0071);and the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong, China (Grant No. 207A010501008)
摘 要:An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm-1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LYM), respectively. After annealing, the intensity ratio between the LVM and E2(high) mode, i.e., ILVM/IE2 (high), increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed.An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm-1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LYM), respectively. After annealing, the intensity ratio between the LVM and E2(high) mode, i.e., ILVM/IE2 (high), increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed.
关 键 词:diluted magnetic semiconductor metalorganic chemical vapour deposition Ram^n scat-tering
分 类 号:TN304.055[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.130