The properties of GaMnN films grown by metalorganic chemical vapour deposition using Raman spectroscopy  

The properties of GaMnN films grown by metalorganic chemical vapour deposition using Raman spectroscopy

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作  者:邢海英 牛萍娟 谢玉芯 

机构地区:[1]School of Electronics and Information Engineering Tianjin Polytechnic University [2]Engineering Research Center of High Power Solid State Lighting Application System [3]School of Electrical Engineering&Automation Tianjin Polytechnic University

出  处:《Chinese Physics B》2012年第7期513-517,共5页中国物理B(英文版)

基  金:Project supported by the National Natural Science Foundation of China (Grant No. 50602018);the Natural Science Foundation of Guangdong Province, China (Grant No. 06025083);the Research Project of Science and Technology of Guangdong Province, China (Grant No. 2006A10802001);the Key Research Project of Science and Technology of Guangzhou, China (Grant No. 2005Z1-D0071);and the Crucial Field and Key Breakthrough Project of Guangdong Province and Hongkong, China (Grant No. 207A010501008)

摘  要:An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm-1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LYM), respectively. After annealing, the intensity ratio between the LVM and E2(high) mode, i.e., ILVM/IE2 (high), increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed.An investigation of room-temperature Raman scattering is carried out on ferromagnetic semiconductor GaMnN films grown by metalorganic chemical vapour deposition with different Mn content values. New bands around 300 and 669 cm-1, that are not observed in undoped GaN, are found. They are assigned to disorder-activated mode and local vibration mode (LYM), respectively. After annealing, the intensity ratio between the LVM and E2(high) mode, i.e., ILVM/IE2 (high), increases. The LO phonon-plasmon coupled (LOPC) mode is found in GaMnN, and the frequency of the LOPC mode of GaMnN shifting toward higher side is observed with the increase in the Mn doping in GaN. The ferromagnetic character and the carrier density of our GaMnN sample are discussed.

关 键 词:diluted magnetic semiconductor metalorganic chemical vapour deposition Ram^n scat-tering 

分 类 号:TN304.055[电子电信—物理电子学]

 

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