Characteristics and properties of metal aluminum thin films prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology  

作　　者：熊玉卿 李兴存 陈强 雷雯雯 赵桥 桑利军 刘忠伟 王正铎 杨丽珍 

机构地区：[1]Science and Technology on Surface Engineering Laboratory,Lanzhou Institute of Physics [2]Laboratory of Plasma Physics and Materials,Beijing Institute of Graphic Communication

出　　处：《Chinese Physics B》2012年第7期559-565,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 11175024);the Beijing Natural Science Foundation, China (Grant No. 1112012);the Science and Technology on Surface Engineering Laboratory;the Beijing Education Committee, China (Grant Nos. BM201002, 2011BAD24B01, KM201110015008, KM201010015005, and PHR20110516)

摘　　要：Metal aluminum （A1） thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity. The square resistivity of as-deposited A1 films is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structural analysis, we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology, but by both the crystallinity and crystal size in this process.Metal aluminum （A1） thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity. The square resistivity of as-deposited A1 films is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structural analysis, we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology, but by both the crystallinity and crystal size in this process.

关 键 词：ALUMINUM plasma-assisted atomic layer deposition ANNEALING 

分 类 号：O484.1[理学—固体物理] TQ174.758[理学—物理]