A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS  

作　　者：胡夏融 张波 罗小蓉 王元刚 雷天飞 李肇基 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Chinese Physics B》2012年第7期592-595,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 60976060);the National Key Laboratory of Analogue Integrated Circuit, China (Grant No. 9140C090304110C0905)

摘　　要：A new analytical model for the surface electric field distribution and breakdown voltage of the silicon oil insulator （SOI） trench lateral double-diffused metal-oxide-semiconductor （LDMOS） is presented. Based on the two-dimensional Laplace solution and Poisson solution, the model considers the influence of structure parameters such as the doping concentration of the drift region, and the depth and width of the trench on the surface electric field. Further, a simple analytical expression of the breakdown voltage is obtained, which offers an effective way to gain an optimal high voltage. All the analytical results are in good agreement with the simulation results.A new analytical model for the surface electric field distribution and breakdown voltage of the silicon oil insulator （SOI） trench lateral double-diffused metal-oxide-semiconductor （LDMOS） is presented. Based on the two-dimensional Laplace solution and Poisson solution, the model considers the influence of structure parameters such as the doping concentration of the drift region, and the depth and width of the trench on the surface electric field. Further, a simple analytical expression of the breakdown voltage is obtained, which offers an effective way to gain an optimal high voltage. All the analytical results are in good agreement with the simulation results.

关 键 词：silicon on insulator （SOI） TRENCH lateral double-diffused metal-oxide-semiconductor（LDMOS） breakdown voltage 

分 类 号：TN386[电子电信—物理电子学]