Vertical-external-cavity surface-emitting lasers and quantum dot lasers  

作　　者：Guangcun SHAN Xinghai ZHAO Mingjun HU Chan-Hung SHEIK WeiHUANG 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Chinese Academy of Sciences,Shanghai 200050,China [2]Department of Physics and Materials Science,City University of Hong Kong,Hong Kong,China [3]Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China [4]Institute of Advanced Materials,Nanjing University of Posts and Telecommunications,Nanjing 210046,China

出　　处：《Frontiers of Optoelectronics》2012年第2期157-170,共14页光电子前沿（英文版）

摘　　要：The use of cavity to manipulate photon emission of quantum dots （QDs） has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells （QWs） to suppress the temperature dependence of the threshold current in vertical-external-cavity surfaceemitting lasers （VECSELs）. In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electro- dynamics （QED）, a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. In this review, we will cover both fundamental aspects and technological approaches of QD VECSEL devices. Lastly, the presented review here has provided deep insight into useful guideline for the development of QD VECSEL technology, future quantum functional nanophotonic devices and monolithic photonic integrated circuits （MPhlCs）.The use of cavity to manipulate photon emission of quantum dots （QDs） has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells （QWs） to suppress the temperature dependence of the threshold current in vertical-external-cavity surfaceemitting lasers （VECSELs）. In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electro- dynamics （QED）, a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. In this review, we will cover both fundamental aspects and technological approaches of QD VECSEL devices. Lastly, the presented review here has provided deep insight into useful guideline for the development of QD VECSEL technology, future quantum functional nanophotonic devices and monolithic photonic integrated circuits （MPhlCs）.

关 键 词：vertical-external-cavity surface-emittinglasers （VECSELs） quantum dot （QD） QD laser quantumelectrodynamics （QED） cavity QED 

分 类 号：TN248.4[电子电信—物理电子学] TN248