一种基于MEMS技术的冗余Pt温度传感器研究  

Research on redundant Pt temperature sensor based on MEMS technology

作　　者：姜国光[1] 段成丽[2] 张洪泉 

机构地区：[1]中国电子科技集团公司第四十九研究所,黑龙江哈尔滨150001 [2]中国国防科技信息中心,北京100142

出　　处：《传感器与微系统》2012年第7期23-25,29,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(60971020);国家高技术研究发展计划资助项目(2006AA040101)

摘　　要：为了提高Pt温度传感器的响应时间和可靠性水平,设计了一种MEMS冗余结构的新型温度传感器。结构基体采用可微加工0.1 mm厚的γ-Al2O3陶瓷;敏感薄膜由磁控溅射沉积而成,并采用离子束刻蚀方法加工成标准阻值。分析和测试表明:传感器输出与温度变化呈线性关系,空气状态下的90%响应时间小于60 s,在-20～180℃温区内非线性小于0.01%。采用二单元冗余设计的并联工作方式可有效提高传感器的可靠水平。A new type of temperature sensor based on MEMS redundant structure is designed to raise the response time and the reliability level of Pt temperature sensor. The T-A12 03 ceramics with thickness of 0.1 mm can be micro-machined. The sensitive films are formed by sputtering and depositting which are controlled by magnetism, and the standard resistance is manufactured by ion beam etching. The analysis and tests show that the relation between the output of sensor and the temperature change is linear. 90 % response time is less than 60 s in the air, and the nonlineary is less than 0.01% in range of the temperature -20 %-180℃. The parallel-connected work mode which is designed by binary redundant units can improve the reliability level of sensors.

关 键 词：温度传感器 冗余设计 响应时间 可靠寿命 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]