微纳薄膜器件的电阻率精确测量方法  

Method for Accurate Measurement of Micro-Nano Thin Film Device Resistivity

作　　者：吴蕾[1] 居冰峰[2] 杨春晖[1] 林军[1] 

机构地区：[1]工业和信息化部电子第五研究所,广州510610 [2]浙江大学流体传动及控制国家重点实验室,杭州310027

出　　处：《半导体技术》2012年第7期572-576,共5页Semiconductor Technology

摘　　要：微纳级别的铝薄膜因宽度和厚度尺寸缩小其试件尺寸接近电极的最小间距、电极间的位置误差等因素的影响,导致电阻率四电极法在测量过程中产生较大的误差。通过对微纳级的导电薄膜的四电极测量法进行数学建模分析,建立了新的四电极测量法数学计算模型,提供精确的电阻率修正系数,并利用基于原子力显微镜的四电极电阻率测量技术精确测量了厚度为400 nm、宽度为30μm的铝薄膜的电阻率,且取不同的作用力重复实验。实验结果证明,基于修正后数学模型的微四电极技术对微纳级别薄膜的电阻率测量方面的准确性和稳定性。Because of the width and thickness of the micronano thin film is very close to the mini mum distance of the electrodes and the position error between electrodes, which led to errors during the measurement process using the fourpointprobe. By analyzing the traditional fourpointprobe method, a new fourpointprobe method model for measurement of micronnano aluminum thin film＇ s resistivity was created. The fourpointAFMprobe technique was applied for the purpose of quantitatively measuring re sistivity of the aluminum film with 400 nm thickness and 30 μm width. The repeatability of resistivity measurements indicates that this new fourpointprobe model technique could be used for fast in situ cha racterization of electrical properties of micronano thin film.

关 键 词：四电极 电阻率 精密测量 数学计算模型 微纳薄膜 

分 类 号：TN307[电子电信—物理电子学]