基于不同掺杂浓度双量子阱OLED的磁电阻效应  

Magnetoresistance effect in double-quantum-well OLED with different doping concentrations of C-545T

作　　者：丁桂英[1] 姜文龙[1] 常喜[1] 汪津[1] 

机构地区：[1]吉林师范大学功能材料物理与化学教育部重点实验室,吉林四平136000

出　　处：《光电子．激光》2012年第7期1285-1290,共6页Journal of Optoelectronics·Laser

基　　金：吉林省科技发展计划(20082112;20100510);吉林省自然科学基金(20101512);吉林省教育厅科研计划(2009192)资助项目

摘　　要：采用1.5%,4.0%和6.0%3种不同的C-545T的掺杂浓度,在常温下制备了一种双量子阱结构的有机电致发光器件(OLEDs),其结构为ITO/2T-NATA(21nm)NPBX(50nm)/[Alq3:C-545T(20nm)/Alq3(3nm)]2/Alq3(17nm)/LiF(0.5nm)/Al,并研究了它们的磁电阻(MR,magne-toresistance)特性。实验结果表明,在室温以及相同的磁场强度和相同电压作用时,掺杂浓度越大,电阻率越小;且随着电压的增加,电阻率逐渐减小;C-545T掺杂浓度为6.0%的器件在V=10V和B=0mT时,器件的电阻率为42.24×103Ω.m;在10V驱动电压的作用和相同磁场强度下,掺杂浓度越小,器件的MR越小,且变化量较大;1.5%掺杂浓度的器件在50mT时获得的MR为-18.36%,且都表现出负磁阻特性。We investigate the magnetoresistance （MR） in double-quantum-well OLED through changing doping concentration of C-545T. The device was fabricated as follows： ITO/2T-NATA （21 nm）NPBX （50 nm）/Alq3 .C-545T （20 nm）/Alq3 （3 nm）]2/Alq3 （17 nm）/LiF （0. 5 nm）/Al. After studing the MR of double-quantum well OLEDs at different doping concentrations（ 1.5 %, 4 %,6 % ） at room temperature and the same magnetic field,the results shows that the resistivity （ρ） decreases with increasing the 545T concentration under the same magnetic field strength and the same voltage. The device with 6 % C-545T is obtained with resistivity of 42. 24 × 10^3 Ω · m at an applied voltage of 10 V and the magnetic field of a 0 mT. MR gets smaller remarkably with reducing C-545T concentration at the same magnetic field strength. The device with 1.5 % C-545T is obtained with MR of -18. 36% at the magnetic field of 50 mT. The negative MR is observed in our devices.

关 键 词：有机磁电阻(OMR) 双量子阱 掺杂浓度 

分 类 号：TN383.1[电子电信—物理电子学]