GaN基倒装焊LED芯片的热学特性模拟与分析  

Simulation and Analysis of Thermal Property of GaN-based Flip-chip Light-emitting Diodes

作　　者：董向坤 杜晓晴[1] 钟广明[1] 唐杰灵 陈伟民[1] 

机构地区：[1]光电技术与系统教育部重点实验室,重庆大学光电工程学院,重庆400044

出　　处：《光电子技术》2012年第2期113-118,共6页Optoelectronic Technology

基　　金：重庆市自然科学基金资助项目(cstc2011jjA0126)

摘　　要：采用有限元方法建立了GaN基倒装LED芯片的三维热学模型,并对其温度分布进行模拟,比较了在不同凸点(焊点)分布、不同粘结层材料与厚度、不同蓝宝石衬底厚度及蓝宝石图形化下的倒装芯片温度分布,研究了粘结层空洞对倒装芯片热学特性的影响,并根据芯片传热模型对模拟结果进行了分析。A three-dimensional thermal model was developed to help study the thermal properties of chip-level GaN-based flip-chip light-emitting diodes （LEDs） with finite-element method. The temperature distributions in different bump configurations, different thickness and materials of adhesive layer, different thicknesses of the sapphire substrate and different sapphire roughening surfaces were simulated and compared. Effect of adhesive cavity on thermal property of the flip-chip LEDs was studied. A heat transfer model was built to explain the results.

关 键 词：GaN基倒装LED芯片 温度分布 有限元数值模拟 凸点分布 蓝宝石图形化 

分 类 号：O482.31[理学—固体物理] TK124[理学—物理]